Titlebook: Evaluation of Advanced Semiconductor Materials by Electron Microscopy; David Cherns Conference proceedings 1989 Plenum Press, New York 198

充足

TEM and STEM Observations of Composition Variations in III-V Semiconductors, BC and BD; their lattice parameter a and their band gap energy vary continuously with the compositions x and y. These materials are thus attractive for the fabrication of optoelectronic devices, because a suitable choice of these in principle independent compositions usually allows both the epitax

cognizant

Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering inctronic and microwave devices. For these devices the alloys are usually required in the form of thin epitaxial layers grown on binary compound substrates such as InP or GaAs. A variety of growth techniques are used to produce these epitaxial layers such as liquid phase epitaxy (LPE), vapour phase ep

OTTER

Elastic Relaxation and TEM Image Contrasts in Thin Composition-Modulated Semiconductor Crystalsmplitudes as small as 10. can produce detectable contrasts under optimum imaging conditions [1], much more than would be predicted on the basis of the perturbed projected potential alone. Strong dynamical scattering effects, stimulated by the bending of diffracting lattice planes, are primarily resp

monochromatic

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Hangar

Intercept

,Der Staubschutz der Wählereinrichtungen,Luminescence spectroscopy is a singularly powerful technique for characterising semiconductor materials. For high quality materials great sensitivity exists to trace impurities and in the case of quantum wells luminescence spectra give a very clear indication of the quality of the structures which have been grown.

Obstacle

compel

https://doi.org/10.1007/978-3-663-09851-5in both high misfit systems such as (001)ZnTe, (001) CdTe and (111)CdTe on (001)GaAs substrates, and low misfit ones such as (001)CdTe on (001) Cd.Zn.Te. Quantum wells and superlattices such as CdTe/ZnTe and HgTe/CdTe will also be investigated.