Titlebook: Epitaxy; Physical Principles Marian A. Herman,Wolfgang Richter,Helmut Sitter Book 2004 Springer-Verlag Berlin Heidelberg 2004 Epilayers in

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In-situ Surface Analysist only for analysis of equilibrium situations but also for growth control and, secondly, they should be applicable in vacuum as well as in gas phase environments. This will allow us to compare the different growth techniques like molecular beam epitaxy and metalorganic vapor phase epitaxy.

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Atomistic Aspectsal thermodynamics [12.1], and a microscopic, or atomistic approach, using stochastic models [12.2]. So far the principles of epitaxy have been discussed in a macroscopic, thermodynamic approach. Here, the microscopic aspects of epitaxial crystallization will be considered, mainly in the frames of st

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Quantum Mechanical Aspectsor vapor) into the ordered structure of a solid crystal (stable phase). This process is accomplished by the creation of chemical bonds between atoms of the metastable phase, which occur in the nearest vicinity to the surface of the crystal, and the atoms of the crystal, which are located in the oute

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Marian A. Herman,Wolfgang Richter,Helmut SitterAn important advantage of this book against monographs devoted to one detailed method of epitaxial crystallization, e.g. MBE, CBE, MOVPE or ALE, is that it allows the non-specialist in the definite gr

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