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Titlebook: Epitaxy; Physical Principles Marian A. Herman,Wolfgang Richter,Helmut Sitter Book 2004 Springer-Verlag Berlin Heidelberg 2004 Epilayers in

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书目名称Epitaxy
副标题Physical Principles
编辑Marian A. Herman,Wolfgang Richter,Helmut Sitter
视频video
概述An important advantage of this book against monographs devoted to one detailed method of epitaxial crystallization, e.g. MBE, CBE, MOVPE or ALE, is that it allows the non-specialist in the definite gr
丛书名称Springer Series in Materials Science
图书封面Titlebook: Epitaxy; Physical Principles  Marian A. Herman,Wolfgang Richter,Helmut Sitter Book 2004 Springer-Verlag Berlin Heidelberg 2004 Epilayers in
描述.Epitaxy. provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. .Epitaxy’s. coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization.... .. .
出版日期Book 2004
关键词Epilayers in device structures; Epitaxy; Helium-Atom-Streuung; Heterostructures; Strained layer growth; T
版次1
doihttps://doi.org/10.1007/978-3-662-07064-2
isbn_softcover978-3-642-08737-0
isbn_ebook978-3-662-07064-2Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 2004
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Prevention and Treatment of Infectionssm of two lattice planes that have networks of identical or quasi-identical form and of closely similar spacings”. Experimental data gained later indicated that epitaxy occurs if the lattice misfit, defined as 100 (a.—a.)/a., where a. and a. are the corresponding network spacings (lattice constants)
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Introduction orientation relationship, as revealed by their external forms [1.1]. These observations led to attempts to reproduce the effect artificially, during crystal growth from solution, and the first recorded successful attempt was reported in 1836 by Frankenheim [1.2], when the now well-known case of par
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Homo- and Heteroepitaxial Crystallization Phenomena., small embryonic clusters of atoms or molecules, agglomerate to form “islands”. As growth proceeds, agglomeration increases, chains of islands are later formed and join up to produce a continuous deposit which, however, still contains channels and holes. These holes eventually fill to give a conti
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Application Areas of Epitaxially Grown Layer Structuresuding mixed systems like, e.g., metal—semiconductor or semiconductor-on-insulator device structures. The epitaxially grown structures may be of very high perfection, satisfying the so-called device-quality demands. They are suitable for application in many branches of the “high technology” part of e
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