Titlebook: Epitaxial Growth of III-Nitride Compounds; Computational Approa Takashi Matsuoka,Yoshihiro Kangawa Book 2018 Springer International Publish

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Atomic Arrangement and In Composition in InGaN Quantum WellsIn this section, atomic arrangement and indium incorporation in InGaN epitaxial layers are discussed. Chichibu et al. have studied why In-containing (Al, In, Ga)N films exhibit a defect-insensitive emission probability.

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Epitaxial Growth of III-Nitride Compounds978-3-319-76641-6Series ISSN 0933-033X Series E-ISSN 2196-2812

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https://doi.org/10.1007/978-3-319-76641-6Fundamental Growth Processes; III-Nitride Semiconductors; Dislocation Core Structure; Adsorption-Desorp

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Titlebook: Epitaxial Growth of III-Nitride Compounds; Computational Approa Takashi Matsuoka,Yoshihiro Kangawa Book 2018 Springer International Publish

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