Titlebook: Epitaxial Growth of III-Nitride Compounds; Computational Approa Takashi Matsuoka,Yoshihiro Kangawa Book 2018 Springer International Publish

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https://doi.org/10.1007/978-3-031-24396-7The reliability of calculated results using computational approach is crucial for discussing various aspects of growth related phenomena in III-nitride compounds.

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Preparing the Patient With COPD for Surgery,The epitaxial growth of thin films is controlled by various growth processes that involve adsorption of atoms and molecules onto a reconstructed surface, their subsequent diffusion across the surface, dissociation of molecules, and desorption from the surface.

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Introduction,Since the successful fabrication of high-quality epitaxial GaN in 1990s, which leads to the development of blue light-emitting diodes and laser diodes, a new frontier in optoelectronics have been opened up.

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Computational MethodsComputational approach to investigate epitaxial growth of III-nitride compounds is primarily concerned with the numerical computation of electronic structures by ab initio calculations and semi-empirical atomistic techniques.

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Thermodynamic Approach to InN EpitaxyIn this chapter, influences of N/III ratio, growth orientation and total pressure on epitaxial growth processes of In(Ga)N are discussed. It is known that N/III ratio is essential parameter to grow In(Ga)N thin films.