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Titlebook: Elementary Processes in Excitations and Reactions on Solid Surfaces; Proceedings of the 1 Ayao Okiji,Hideaki Kasai,Kenji Makoshi Conference

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楼主: Clique
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Literatur und Studentenbewegungfunction. The Auger process and the resonant tunneling process are both considered. We show that the approximation interpolates between the limit of fast ion motion and that of slow ion motion. Also shown is that the range of validity is quite wide in Auger processes. The similar procedure is applie
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https://doi.org/10.1007/978-3-476-00595-3, reaction processes activated by direct coupling to electronic degrees of freedom are theoretically possible. Femtosecond pulse laser desorption is proposed as a canonical example of this new class of electronically-activated reaction process. The theory of femtosecond pulse laser desorption is out
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Springer Series in Solid-State Scienceshttp://image.papertrans.cn/e/image/307417.jpg
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https://doi.org/10.1007/978-3-662-63000-6raction method for small clusters. An electronic excitation to an unoccupied level with some 5a contributions is shown to lead to a repulsive potential energy surface, suggesting that an MGR-like mechanism is operative.
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Facetten zur Vorgeschichte der Reportagecently been proposed [1]. For many kinds of dimers it gives good van der Waals coefficients. Here we also show results for atoms outside surfaces, where it gives a z. behavior and reasonable van der Waals coefficients.
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Das ideologische Projekt von Peter Weiss,lent states are under certain circumstances relevant for an atom in motion outside a metal surface. It is predicted that anomalous temperature, energy, or velocity dependence may as a result occur in physically measured properties.
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Ab Initio Study on Photo-Induced Desorption of CO and NO from Pt(111)raction method for small clusters. An electronic excitation to an unoccupied level with some 5a contributions is shown to lead to a repulsive potential energy surface, suggesting that an MGR-like mechanism is operative.
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Literarästhetisches TextverstehenSeveral theoretical and experimental results on the dynamics of dissociative adsorption and recombinative desorption of hydrogen on silicon are reviewed.
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