Titlebook: Electrical Characterization of Silicon-on-Insulator Materials and Devices; Sorin Cristoloveanu,Sheng S. Li Book 1995 Springer Science+Busi

Default

Methods of Forming SOI Wafers,he case for silicon on sapphire (SOS) and silicon on zirconia (SOZ). In the second group, a thin insulating layer is used to separate the active semiconductor layer from the semiconductor substrate (i.e., the SIS structure). Methods of forming SIS structures include Separation by IM-plantation of OX

金丝雀

facilitate

Wafer-Screening Techniques,d buried oxide, and other electrical and physical properties (carrier lifetime, interface trapping, etc.) of the starting wafers prior to the fabrication of SOI devices and circuits. Fluctuations in quality and uniformity of SOI materials have great impact on the performance, yield, and reliability

MUTE

absolve

SIS Capacitor-Based Characterization Techniques,aces and in the buried oxide of the SOI material by using its inherent silicon—insulator—silicon (SIS) capacitor structure. The techniques include small-signal a.c. capacitance and conductance as well as transient capacitance methods.[.,.] The capacitance and conductance methods consist of low-frequ

四目在模仿