找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Electrical Characterization of Silicon-on-Insulator Materials and Devices; Sorin Cristoloveanu,Sheng S. Li Book 1995 Springer Science+Busi

[复制链接]
查看: 40121|回复: 45
发表于 2025-3-21 17:17:32 | 显示全部楼层 |阅读模式
书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices
编辑Sorin Cristoloveanu,Sheng S. Li
视频video
丛书名称The Springer International Series in Engineering and Computer Science
图书封面Titlebook: Electrical Characterization of Silicon-on-Insulator Materials and Devices;  Sorin Cristoloveanu,Sheng S. Li Book 1995 Springer Science+Busi
描述Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu­ siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri­ butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capabil
出版日期Book 1995
关键词Diode; electronics; material; microelectronics; transistor; Wafer
版次1
doihttps://doi.org/10.1007/978-1-4615-2245-4
isbn_softcover978-1-4613-5945-6
isbn_ebook978-1-4615-2245-4Series ISSN 0893-3405
issn_series 0893-3405
copyrightSpringer Science+Business Media New York 1995
The information of publication is updating

书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices影响因子(影响力)




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices影响因子(影响力)学科排名




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices网络公开度




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices网络公开度学科排名




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices被引频次




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices被引频次学科排名




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices年度引用




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices年度引用学科排名




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices读者反馈




书目名称Electrical Characterization of Silicon-on-Insulator Materials and Devices读者反馈学科排名




单选投票, 共有 1 人参与投票
 

1票 100.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 22:41:57 | 显示全部楼层
Grundlagen der anorganischen Chemieonductor layer from the semiconductor substrate (i.e., the SIS structure). Methods of forming SIS structures include Separation by IM-plantation of OXygen (SIMOX), Zone-Melting Recrystallization (ZMR) of polysilicon, Epitaxial Lateral Overgrowth (ELO), Full Isolation by Porous Oxidized Silicon (FIPOS), and Wafer Bonding (WB).
发表于 2025-3-22 02:48:51 | 显示全部楼层
Grundlagen der betrieblichen Personalpolitik. In response to intrinsic problems (large values of the sheet resistance, full depletion, in-depth inhomogeneity, etc.) and new opportunities (substrate bias influence), more refined experimental setup and modeling are necessary.
发表于 2025-3-22 06:48:47 | 显示全部楼层
发表于 2025-3-22 11:17:03 | 显示全部楼层
发表于 2025-3-22 16:40:37 | 显示全部楼层
https://doi.org/10.1007/978-3-322-85672-2-hardened CMOS circuits, the advanced CMOS ULSI, high/low voltage, high temperature devices, three-dimensional circuits, and sensors. Some innovative and speculative components will be presented in the last section.
发表于 2025-3-22 20:38:49 | 显示全部楼层
发表于 2025-3-23 01:04:17 | 显示全部楼层
Introduction,con technology is now facing very fundamental limitations. At this point, the potential of SOI technologies has become very attractive. SOI devices are more tolerant to the constraints of scaling-down rules, and they perform superbly.
发表于 2025-3-23 03:28:11 | 显示全部楼层
发表于 2025-3-23 08:57:37 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-24 02:50
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表