Titlebook: Effective Electron Mass in Low-Dimensional Semiconductors; Sitangshu Bhattacharya,Kamakhya Prasad Ghatak Book 2013 Springer-Verlag Berlin

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Tartar

https://doi.org/10.1007/978-3-663-05911-0 applications in this context in Section 8.2 and also present a very brief review of the experimental investigations in Section 8.3. The section 8.4 contains the single experimental open research problem.

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Book 2013ical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense elec

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搜寻

Die Kernaussagen auf einen Blick, mass which enters in various transport coefficients and plays the most dominant role in explaining the experimental results of different scattering mechanisms through Boltzmann’s transport equation [4,5]. The carrier degeneracy in semiconductors influences the effective mass when it is energy dependent.

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现晕光

Effective Electron Mass in Low-Dimensional Semiconductors978-3-642-31248-9Series ISSN 0933-033X Series E-ISSN 2196-2812

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JOG

https://doi.org/10.1007/978-3-658-07047-2wo infinitely deep one-dimensional (1D) rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport.

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