书目名称 | Effective Electron Mass in Low-Dimensional Semiconductors | 编辑 | Sitangshu Bhattacharya,Kamakhya Prasad Ghatak | 视频video | | 概述 | Provides a treatment of the effective electron mass in nanodevices.Explains changes of the band structure of optoelectronic semiconductors by intense electric fields and light waves.Gives insight into | 丛书名称 | Springer Series in Materials Science | 图书封面 |  | 描述 | This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirant | 出版日期 | Book 2013 | 关键词 | EEM book; EEM review; effective electron mass, EEM; low dimensional semiconductors; non-parabolic Semico | 版次 | 1 | doi | https://doi.org/10.1007/978-3-642-31248-9 | isbn_softcover | 978-3-642-43864-6 | isbn_ebook | 978-3-642-31248-9Series ISSN 0933-033X Series E-ISSN 2196-2812 | issn_series | 0933-033X | copyright | Springer-Verlag Berlin Heidelberg 2013 |
The information of publication is updating
|
|