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Titlebook: Copper Interconnect Technology; Tapan Gupta Book 2009 Springer-Verlag New York 2009 circuit performance.copper/low-k technology.cu interco

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发表于 2025-3-21 16:57:43 | 显示全部楼层 |阅读模式
书目名称Copper Interconnect Technology
编辑Tapan Gupta
视频video
概述Provides a detailed description of critical next-generation materials and technology for microelectronics.Suitable for use as a teaching text in graduate programs and industry short courses.Significan
图书封面Titlebook: Copper Interconnect Technology;  Tapan Gupta Book 2009 Springer-Verlag New York 2009 circuit performance.copper/low-k technology.cu interco
描述.Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address t
出版日期Book 2009
关键词circuit performance; copper/low-k technology; cu interconnect technology; electronics; electronics packa
版次1
doihttps://doi.org/10.1007/978-1-4419-0076-0
isbn_softcover978-1-4899-8511-8
isbn_ebook978-1-4419-0076-0
copyrightSpringer-Verlag New York 2009
The information of publication is updating

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978-1-4899-8511-8Springer-Verlag New York 2009
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Diffusion and Barrier Layers,stals [1] for the formation of ., ., and . regions. The performance of the devices depends critically on the impuri-ty concentration and the impurity profile. For this reason the . in semiconductors has been studied extensively.
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Coping and Living with Cervical Cancer,n sub-100 nm devices. With rapidly . and more demand for circuit ., low-. and passivation materials have been inserted with Cu-interconnects to address the additional . reduction [.–.]. Unfortunately, as the thickness of the gate oxide becomes very thin because of the scaling down of channel length,
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Coping and Living with Cervical Cancer,stals [1] for the formation of ., ., and . regions. The performance of the devices depends critically on the impuri-ty concentration and the impurity profile. For this reason the . in semiconductors has been studied extensively.
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Coping and Living with Cervical Cancer,on the deposited dielectric layer is the usual practice in damascene (single/dual) architecture. The main driver behind this is advanced .. In an effort to keep up the trend of reduction in feature size, semiconductor industries have switched over from conventional ultraviolet (UV) to deep ultraviol
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