Titlebook: Computational Electronics; Semiconductor Transp K. Hess,J. P. Leburton,U. Ravaioli Book 1991 Springer Science+Business Media Dordrecht 1991

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https://doi.org/10.1007/978-3-642-82037-3nvolve tradeoffs between physical accuracy, computational costs, and implementation difficulty. This paper presents a new transport model that includes overshoot effects within the framework of a conventional drift-diffusion approach, thereby providing an attractive combination of physical accuracy

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WELCHE Steuervorteile gibt es für Sie? more effective means to describe the behavior of device structures requiring detailed physical descriptions and increased computational efficiency. Applications presented in this paper include: (a) simulation of transport across hetero-barriers with quasi-ballistic effects; (b) simulation of metal-

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https://doi.org/10.1007/978-3-663-13012-3in a self-consistent electric field, and a flexible representation of the two-dimensional device geometry and doping. The result is a single simulation code capable of treating a multitude of device types (MOSFET, MESFET, Bipolar, HEMT) and semiconductors (electrons in Si, Ge, unstrained SiGe, GaAs,

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Steuerverfahren für Drehstrommaschinenent criterion for the numerical analysis of PDE regardless of its decretization and solution methods. The numerical examples are presented along with the computational algorithm of IMAR and practical scheme of adaptive mesh refinement (AMR) which is implemented on 2D device simulator TSAR.

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Steuerverfahren für Drehstrommaschinen temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.