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Titlebook: Computational Electronics; Semiconductor Transp K. Hess,J. P. Leburton,U. Ravaioli Book 1991 Springer Science+Business Media Dordrecht 1991

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书目名称Computational Electronics
副标题Semiconductor Transp
编辑K. Hess,J. P. Leburton,U. Ravaioli
视频video
丛书名称The Springer International Series in Engineering and Computer Science
图书封面Titlebook: Computational Electronics; Semiconductor Transp K. Hess,J. P. Leburton,U. Ravaioli Book 1991 Springer Science+Business Media Dordrecht 1991
描述Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis­ cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci­ ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc­ cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many d
出版日期Book 1991
关键词Computer; Laser; Signal; Simulation; Transistor; electronics; field-effect transistor; heterojunction bipol
版次1
doihttps://doi.org/10.1007/978-1-4757-2124-9
isbn_softcover978-1-4419-5122-9
isbn_ebook978-1-4757-2124-9Series ISSN 0893-3405
issn_series 0893-3405
copyrightSpringer Science+Business Media Dordrecht 1991
The information of publication is updating

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Beschreibung von Steuerungsaufgaben,nt of VLSI. Simulators continue to be applied in the analysis of new device concepts and have become an essential component of the technology design process [1]. As scaling continues into the ULSI realm (≤0.25μm), device simulation faces new challenges, necessitating improvements to both physical an
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https://doi.org/10.1007/978-3-658-21885-0ion term. Thus the hydrodynamic model PDEs have hyperbolic, parabolic, and elliptic modes..The nonlinear hyperbolic modes support shock waves. Numerical sim-ulations of a steady-state electron shock wave in a semiconductor device are presented, using steady-state second upwind and high-order time-de
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Steuerverfahren für Drehstrommaschinen temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.
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