Titlebook: Circuit and Interconnect Design for RF and High Bit-rate Applications; Hugo Veenstra,John R. Long Book 20081st edition Springer Science+Bu

斜坡

https://doi.org/10.1007/978-1-4020-6884-3Avalanche Multiplication; CMOS; Circuit Design; Cross-Connect Switch; Device Metrics; Distributed Capacit

彻底明白

978-90-481-7750-9Springer Science+Business Media B.V. 2008

CYN

想象

Ointment

Thailand in the Regional Division of Labourcan be increased by employing double emitter followers in the RF signal path. However, to be able to do so, the supply voltage must be increased to a value above the collector-emitter breakdown voltage (BVCEO) of the high-speed transistors of the technology.

tinnitus

Bias Circuits Tolerating Output Voltages Above BVCEO,can be increased by employing double emitter followers in the RF signal path. However, to be able to do so, the supply voltage must be increased to a value above the collector-emitter breakdown voltage (BVCEO) of the high-speed transistors of the technology.

音乐等

Oligarchy

parsimony

Circuit and Interconnect Design for RF and High Bit-rate Applications

anesthesia

Book 20081st editionthe effects of interconnections as soon as estimated interconnect lengths are available. Application of interconnect design is illustrated using a 12.5 Gb/s crosspoint switch example taken from a volume production part.