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Titlebook: Charge Transport in Low Dimensional Semiconductor Structures; The Maximum Entropy Vito Dario Camiola,Giovanni Mascali,Vittorio Roman Book

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Application of MEP to Silicon,In this chapter MEP is applied to close the moment equations for electrons in silicon semiconductors. In our model we consider the electrons distributed in the six .-valleys assumed as equivalent. The approximation given by Kane will be used as dispersion relation.
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Quantum Corrections to the Semiclassical Models,Based on the considerations of the previous chapters, a natural way to get a quantum macroscopic model is to use MEP in a quantum framework to close the moment system arising from the Wigner equation.
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Numerical Method and Simulations,The aim is to simulate the DG-MOSFET of first figure in this chapterwith the model presented in Chap. . consisting of the Schrödinger–Poisson block (.), (.) coupled to the energy-transport equations (.), (.).
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Maximum Entropy Principle,reat quantity of particles, i.e. of the order of the Avogadro’s number (6.022 × 10.), the information for a detailed description of the motion of every particle are practically not available; therefore distribution functions and statistical methods are introduced in order to describe the behavior of complex systems.
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Maximum Entropy Principle,ical mechanics requires the knowledge of its initial position and momentum besides, of course, the system of forces acting upon it. In the case of a great quantity of particles, i.e. of the order of the Avogadro’s number (6.022 × 10.), the information for a detailed description of the motion of ever
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Some Formal Properties of the Hydrodynamical Model,olic system in the physically relevant region of the space of the dependent variables. Such a property is a consequence of the general theory developed in Chap. . when applied to the complete non linear model but since we have performed an expansion of the original non linear MEP distribution functi
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