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Titlebook: Charge Transport in Low Dimensional Semiconductor Structures; The Maximum Entropy Vito Dario Camiola,Giovanni Mascali,Vittorio Roman Book

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Der Vertrieb gewinnt an Bedeutung,olic system in the physically relevant region of the space of the dependent variables. Such a property is a consequence of the general theory developed in Chap. . when applied to the complete non linear model but since we have performed an expansion of the original non linear MEP distribution function, the hyperbolicity have to be checked.
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https://doi.org/10.1007/978-3-8349-9269-7The aim is to simulate the DG-MOSFET of first figure in this chapterwith the model presented in Chap. . consisting of the Schrödinger–Poisson block (.), (.) coupled to the energy-transport equations (.), (.).
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Application of MEP to Charge Transport in Semiconductors,MEP can be used for solving the closure problem related to the moment systems associated to the electron transport equations. Here the case of 3D electron gas is considered. Lower dimensional electron gases will be treated in the next chapters.
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