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Titlebook: Charge Transport in Low Dimensional Semiconductor Structures; The Maximum Entropy Vito Dario Camiola,Giovanni Mascali,Vittorio Roman Book

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书目名称Charge Transport in Low Dimensional Semiconductor Structures
副标题The Maximum Entropy
编辑Vito Dario Camiola,Giovanni Mascali,Vittorio Roman
视频video
概述Complete description of the systematic use of the maximum entropy principle in semiconductors.Models for charge transport in DG-MOSFETs that can be useful tools in computer-aided design in nanoelectro
丛书名称Mathematics in Industry
图书封面Titlebook: Charge Transport in Low Dimensional Semiconductor Structures; The Maximum Entropy  Vito Dario Camiola,Giovanni Mascali,Vittorio Roman Book
描述.This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics,
出版日期Book 2020
关键词Maximum entropy principle; charge transport in confined structure; simulation of electron devices; char
版次1
doihttps://doi.org/10.1007/978-3-030-35993-5
isbn_softcover978-3-030-35995-9
isbn_ebook978-3-030-35993-5Series ISSN 1612-3956 Series E-ISSN 2198-3283
issn_series 1612-3956
copyrightSpringer Nature Switzerland AG 2020
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Der Vertrieb gewinnt an Bedeutung,hereafter DG-MOSFET). This model is based on the Schrödinger–Poisson system coupled to a set of energy-transport equations, one for each subband, arising from the moment systems associated to the equations (.) with closure relationsobtained by MEP.
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