Titlebook: CMOS VLSI Engineering; Silicon-on-Insulator James B. Kuo,Ker-Wei Su Book 1998 Springer Science+Business Media Dordrecht 1998 CMOS.VLSI.anal

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,SOI CMOS Devices—Basic,mobilities in SOI CMOS devices are complicated especially for small-geometry SOI CMOS devices. In a short-channel SOI CMOS device, the internal electric field may be high. As a result, carriers in the channel may be traveling with a large energy. Therefore, carrier temperature may be much higher tha

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Special-Purpose SOI,vices are described. Recently, SOI technology has also been used to integrate BiCMOS devices. SOI MESFET and JFETs have also been created. In addition, single-electron transistors (SET) built on SOI SIMOX substrates have been realized. Amorphous and polysilicon thin-film transistors built on insulat

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Book 1998resented, followed by a CAD program, ST-SPICE, whichincorporates models for deep-submicron fully-depleted mesa-isolatedSOI CMOS devices and special purpose SOI devices including polysiliconTFTs. ..CMOS VLSI Engineering: Silicon-On-Insulator. is written forundergraduate senior students and first-year

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