Titlebook: CMOS VLSI Engineering; Silicon-on-Insulator James B. Kuo,Ker-Wei Su Book 1998 Springer Science+Business Media Dordrecht 1998 CMOS.VLSI.anal

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Introduction,, the advantages of the SOI CMOS technology are described. The applications of SOI CMOS technology for realizing VLSI digital circuits are introduced. The objectives of this book in terms of processing technology, device modeling, and circuit designs for SOI CMOS VLSI are outlined.

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,SOI CMOS Devices—Advanced,he buried oxide isolation structure, accumulation-mode devices are also important. In this chapter, first, the DC and the capacitance models for the accumulation-mode SOI MOS devices are presented. Recently, the trends on the fully-depleted SOI CMOS devices are toward using very thin silicon thin-fi

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SOI-Technology ST-SPICE,I circuits using SOI CMOS technology have been reported increasingly. Since the performance of SOI CMOS devices is quite different from that of the bulk ones, SOI VLSI circuits have demonstrated unique phenomena as described in Chapter 3. When designing SOI VLSI circuits, the SPICE CAD program desig

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H. V. Grushevskaya,G. G. Krylovmobilities in SOI CMOS devices are complicated especially for small-geometry SOI CMOS devices. In a short-channel SOI CMOS device, the internal electric field may be high. As a result, carriers in the channel may be traveling with a large energy. Therefore, carrier temperature may be much higher tha

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P. P. Simeonova,N. Opopol,M. I. Lustervices are described. Recently, SOI technology has also been used to integrate BiCMOS devices. SOI MESFET and JFETs have also been created. In addition, single-electron transistors (SET) built on SOI SIMOX substrates have been realized. Amorphous and polysilicon thin-film transistors built on insulat