Titlebook: CMOS VLSI Engineering; Silicon-on-Insulator James B. Kuo,Ker-Wei Su Book 1998 Springer Science+Business Media Dordrecht 1998 CMOS.VLSI.anal

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书目名称CMOS VLSI Engineering影响因子(影响力)




书目名称CMOS VLSI Engineering影响因子(影响力)学科排名




书目名称CMOS VLSI Engineering网络公开度




书目名称CMOS VLSI Engineering网络公开度学科排名




书目名称CMOS VLSI Engineering被引频次




书目名称CMOS VLSI Engineering被引频次学科排名




书目名称CMOS VLSI Engineering年度引用




书目名称CMOS VLSI Engineering年度引用学科排名




书目名称CMOS VLSI Engineering读者反馈




书目名称CMOS VLSI Engineering读者反馈学科排名

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H. V. Grushevskaya,G. G. Krylovo bulk CMOS devices, SOI CMOS devices have been reknown for their superior performance in smaller second order effects, no latchup, and higher speed. Due to their unique structure, SOI CMOS devices have performance quite different from the bulk ones. In this chapter, fundamental behaviors of SOI CMO

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Sofiane El-Kirat-Chatel,Audrey Beaussarthe buried oxide isolation structure, accumulation-mode devices are also important. In this chapter, first, the DC and the capacitance models for the accumulation-mode SOI MOS devices are presented. Recently, the trends on the fully-depleted SOI CMOS devices are toward using very thin silicon thin-fi