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Titlebook: CMOS Test and Evaluation; A Physical Perspecti Manjul Bhushan,Mark B. Ketchen Book 2015 Springer Science+Business Media New York 2015 CMOS

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书目名称CMOS Test and Evaluation
副标题A Physical Perspecti
编辑Manjul Bhushan,Mark B. Ketchen
视频video
概述Relates CMOS product performance to basic physical models of transistors and passive elements.Uses embedded test structures and sensors for product test debug, yield and performance evaluation.Describ
图书封面Titlebook: CMOS Test and Evaluation; A Physical Perspecti Manjul Bhushan,Mark B. Ketchen Book 2015 Springer Science+Business Media New York 2015 CMOS
描述CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.
出版日期Book 2015
关键词CMOS manufacturing test and quality control; CMOS microelectronic test structures; CMOS products; CMOS
版次1
doihttps://doi.org/10.1007/978-1-4939-1349-7
isbn_softcover978-1-4939-4702-7
isbn_ebook978-1-4939-1349-7
copyrightSpringer Science+Business Media New York 2015
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IDDQ and Power,d defects contribute to current drawn in the quiescent state of a CMOS chip. Measurement of this current, IDDQ, is useful in eliminating chips with gross defects early in the test flow. DC and AC components of total power in the active mode are functions of power supply voltage, switching activity a
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Variability,trical tests are defined to cover the range of operating conditions such as power supply voltage and temperature over which any chip may need to function. The data collected are analyzed to isolate factors influencing chip yield and performance. Understanding the various sources of variations and th
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Reliability,uring test. Models describing various degradation mechanisms in MOSFET and wire interconnect properties over time are provided by the silicon manufacturer and often included in circuit design tools to ensure adequate design margins. Models for failure rates of silicon process-induced defects are gen
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