Titlebook: Beyond Si-Based CMOS Devices; Materials to Archite Sangeeta Singh,Shashi Kant Sharma,Durgesh Nandan Book 2024 The Editor(s) (if applicable)

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M. Witko,R. Tokarz-Sobieraj,R. Grybośese applications have been made possible by scaling thanks to improvements in complexity and performance. In order to increase the historical cadence of integrated circuit scaling as dimensional scaling of CMOS inevitably approaches fundamental constraints, a number of pioneering and advancement of

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Brain-Waves

David A. Case,Louis Noodleman,Jian Lianical properties is grabbing worldwide market in the area of electronics, home appliances and medical field. The present book chapter emphasizes on graphene-based field effect transistor devices towards different applications. It comprehensively reviewed the synthesis of graphene, properties of gra

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Metal-Ligand Interactions in Cu-Proteins,ces and energy production. The number of devices that focus on non-graphene monolayers has significantly increased due to the novel characteristics and applications arising from two-dimensional confinement. An attempt has been made here to comprehensively describe the present state of the technology

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fatuity

Concepts in Heterogeneous Catalysis,s, and short-channel effects are responsible toward the degradation of the MOS devices. At this point of time, a device which exhibits low leakage and low subthreshold swing is much needed, and tunnel field-effect transistors (TFETs) reported to be a suitable alternative to MOSFETs. TFETs basically

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https://doi.org/10.1007/978-94-011-2822-3ve capacitance (NC) into their design. Negative capacitance field-effect transistor (NCFET) is quickly becoming a popular alternative technology that promises to increase the power efficiency of transistors by many times while still being compatible with the current CMOS fabrication method. The tran

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