Titlebook: Beyond Si-Based CMOS Devices; Materials to Archite Sangeeta Singh,Shashi Kant Sharma,Durgesh Nandan Book 2024 The Editor(s) (if applicable)

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Gongcheng Yao,Shuaihang Pan,Xiaochun Liice design, this chapter promotes a multidisciplinary and cooperative approach. It offers practitioners, engineers, and academics a framework for guidance and important insights into the complexities of semiconductor innovation.

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Simona E. Hunyadi Murph,Alexandra Goriounovas, with a particular emphasis on resistive random-access memory. This article includes a review of recent developments in the design of RRAM-based neuromorphic computing circuits inspired by the human brain.

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Beyond Si-Based CMOS Devices: Needs, Opportunities, and Challengesese applications have been made possible by scaling thanks to improvements in complexity and performance. In order to increase the historical cadence of integrated circuit scaling as dimensional scaling of CMOS inevitably approaches fundamental constraints, a number of pioneering and advancement of

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Nanowire-Based Si-CMOS Devicesr delves into the intricate processes and technologies involved in creating silicon nanowires and seamlessly integrating them into CMOS devices. The discussions encompass various aspects, including growth techniques, patterning methods, doping processes, and integration considerations. Silicon nanow

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Carbon Nanotube FETS: An Alternative for Beyond Si Devicesolution to lower fabrication costs and enables further device size scaling in the midst of current nanotechnology research and development. Modern integrated systems mostly consist of copper/aluminum cables and silicon-based transistors. These transistors and wires might both be changed to carbon na

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