Titlebook: Applications of Ion Beams to Metals; S. T. Picraux,E. P. EerNisse,F. L. Vook Book 1974 Plenum Press, New York 1974 corrosion.electron micr

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The Effects of Ion Bombardment on the Thin Film Oxidation Behavior of Zircaloy-4 and Zr-1.0 Nb energies in the 67 to 150 keV range to fluences of 5 x 10. to 1 x 10. ions/cm. provided lattice damage on the order of 10 to 100 dpa. Subsequent autoclave oxidation was used to explore the damage effects on reaction rate. Since annealing accompanied oxidation, several sequential bombardment/ oxidat

Misnomer

Ion Implantation and Backscattering from Oxidized Single-Crystal Copperining varying amounts of aluminum are quite common, and are denominated aluminum bronzes. These alloys have improved characteristics like corrosion resistance, high strength, hardness and wear resistance. Alloys containing up to 18.4% aluminum have been studied as well as their different metallurgic

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Movement of Ions During the Anodic Oxidation of Aluminumthe surface layers of specimens by ion implantation at low energy (20–40 keV) and determining the depths of the implants after oxidation by means of Rutherford back-scattering analysis. Two different situations were investigated; each species was implanted into specimens covered only by natural air-

语源学

Friction and Wear of Ion Implanted Metalsent contribution supplements these data by describing experiments in which equally striking reductions in wear are observed for the case of a pin under heavy load rubbing on an ion implanted disc. B., N. and Mo. implanted into steel to doses between 10. and 10. ions-cm. reduce wear on a test pin by

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Proponent

Rutherford Scattering Studies of Diffusion in Thin Multilayer Metal Filmsnnealing temperature, have been measured by transmission electron microscopy. The diffusion of Au into Rh is dominated by grain boundary effects. When Rh is the intermediate layer, Au saturates the fine structured Rh grains in the as-deposited films without any heat treatment. The diffusion behavior

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Ion Backscattering Study of WSi2 Layer Growth in Sputtered W Contacts on Siliconaned P or B doped (111) single crystal Si substrates. At temperatures in the range 625 C to 750 C, Si is observed to migrate into the W films and form a well-defined WSi. reaction layer. Typically, at 650 C, about 750 Å of W is consumed in four hours. A detailed comparison of the backscattering spec

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