Titlebook: Analysis and Simulation of Heterostructure Devices; Vassil Palankovski,Rüdiger Quay Book 2004 Springer-Verlag Wien 2004 HBTs.HEMTs.Heteroj

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High Electron Mobility Transistors,her mobility and comparably lower bandgap. If the bandgap alignment of the two materials is appropriately chosen, a channel forms due solely to the alignmentof the band edges and not, as for silicon MOSFETs or III-V MESFETs [460], due to an oxide/semiconductor interface or doping profiles. The channel material is not intentionally doped.

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978-3-7091-7193-6Springer-Verlag Wien 2004

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Vassil Palankovski,Rüdiger QuayFirst full and comprehensive modeling of relevant compound semiconductors.Verified by precise simulation of real-state-of-the-art devices in over 25 different simulation examples.Bridges the gap betwe

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Titlebook: Analysis and Simulation of Heterostructure Devices; Vassil Palankovski,Rüdiger Quay Book 2004 Springer-Verlag Wien 2004 HBTs.HEMTs.Heteroj

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