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Titlebook: Alternative Lithography; Unleashing the Poten Clivia M. Sotomayor Torres Book 2003 Springer Science+Business Media New York 2003 electronic

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3 Diamagnetic susceptibility of AlH4NO8S2,gy. It got even larger attention when it was reported that sub 10 nm features on a Si stamp could be replicated into a resist layer, which in turn had a profile allowing a lift-off process to be possible..,. More reports about NIL technology followed and soon also devices were reported made with NIL
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2 Diamagnetic susceptibility of AlF3, the semiconductor industry has relied on optical lithography and new generations of optical steppers are being developed for shorter wavelengths. Anyhow, in order to produce sub-50 nm lithography researches have started to look for new solutions, such as X-ray lithography, fast electron beam (e-bea
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https://doi.org/10.1007/978-3-540-44736-8, low cost and high throughput is becoming a prime necessity. Nowadays, this demand arises not only from the microelectronics community where miniaturization has been a driving strategy since a long time, but originates from many fields: optics, photonics, nanoelectronics, nano-magnetism, nano-elect
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https://doi.org/10.1007/978-3-540-44736-8 shows the general princi-ples of μCP First, an elastomeric stamp is prepared from an already existing patterned surface, called the master, by covering the surface with a liquid prepolymer (usually poly(dimethylsiloxane), PDMS) followed by curing. The hardened elastomeric stamp is peeled off the ma
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https://doi.org/10.1007/978-3-540-44736-8i.e. to arrange spontaneously, as a dense, ordered and stable monolayer on suitable surfaces. Generally, these molecules contain a chemically reactive head that anchors onto the surface, and a linear flexible chain of methyl groups which orients itself approximately with the normal to the surface as
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