Titlebook: Wide-Bandwidth High Dynamic Range D/A Converters; Konstantinos Doris,Arthu van Roermund,Domine Leena Book 2006 Springer-Verlag US 2006 Ana

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书目名称Wide-Bandwidth High Dynamic Range D/A Converters影响因子(影响力)




书目名称Wide-Bandwidth High Dynamic Range D/A Converters影响因子(影响力)学科排名




书目名称Wide-Bandwidth High Dynamic Range D/A Converters网络公开度




书目名称Wide-Bandwidth High Dynamic Range D/A Converters网络公开度学科排名




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书目名称Wide-Bandwidth High Dynamic Range D/A Converters年度引用学科排名




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书目名称Wide-Bandwidth High Dynamic Range D/A Converters读者反馈学科排名

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Book 2006uencies of digital systems place a similar demand for the interface circuits. The second trend takes place locally within the int- face. Initially, the D/A converter was placed at the beginning of the interface chain, and all signal conditioning was implemented in the analog domain after the D/A con

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n Programmcode umsetzen kann..Bereits am Anfang des Kap. 5 wurde erwähnt, dass das erreichte Analyseklassenmodell sich nur sehr bedingt für eine direkte Umsetzung eignet, gerade wenn es von unerfahrenen Modellierern erstellt wurde. Generell wird nach einem Klassenmodell gesucht, das möglichst alle d

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Digital to Analog conversion concepts,ta in Analog format. This description excludes the electrical nature of conversion, and refers basically to how information is represented, i.e. in digital or in analog form. When one speaks of an electronic Digital to Analog converter there are additional conversions that take place.

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Functional analysis of local timing errors,curacies. The functional and some architectural issues of this error raised in chapter 5.2.5 will be addressed. Here the focus is on the DAC core hardware in relation to the properties of the errors and their relationship with the architectural parameters. The input signals are assumed sinusoidal.

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Design of a 12 bit 500 Msample/s DAC,formation of dominant error mechanisms for high frequencies. The DAC has 12 bits and operates up to 500 . with exceptionally good high frequency linearity at low power cost and silicon area. It is realized in a CMOS 0.18 . process.

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