| 书目名称 | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
| 编辑 | Zhiqiang Li |
| 视频video | http://file.papertrans.cn/921/920106/920106.mp4 |
| 概述 | Nominated as an Excellent Doctoral Dissertation by Peking University in 2014.Proposes innovative methods for addressing the challenges in the source/drain engineering of germanium nMOSFETs.Experimenta |
| 丛书名称 | Springer Theses |
| 图书封面 |  |
| 描述 | This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. |
| 出版日期 | Book 2016 |
| 关键词 | Contact resistance; Thermal stability; Germanium-based MOSFET; Dopant segregation; Source and drain; Nick |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-662-49683-1 |
| isbn_softcover | 978-3-662-57026-5 |
| isbn_ebook | 978-3-662-49683-1Series ISSN 2190-5053 Series E-ISSN 2190-5061 |
| issn_series | 2190-5053 |
| copyright | Springer-Verlag Berlin Heidelberg 2016 |
|Archiver|手机版|小黑屋|
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