找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Switching in Semiconductor Diodes; Yurii R. Nosov Book 1969 Springer-Verlag US 1969 diffusion.resistance.semiconductor.translation

[复制链接]
查看: 54345|回复: 40
发表于 2025-3-21 19:38:28 | 显示全部楼层 |阅读模式
书目名称Switching in Semiconductor Diodes
编辑Yurii R. Nosov
视频video
丛书名称Monographs in Semiconductor Physics
图书封面Titlebook: Switching in Semiconductor Diodes;  Yurii R. Nosov Book 1969 Springer-Verlag US 1969 diffusion.resistance.semiconductor.translation
描述It gives me great pleasure to learn that this book, whose ori­ gin owes much to the work of American scientists and engineers on semiconductor technology, will reach American and other English­ speaking readers. I am grateful to Plenum Publishing Corporation for arranging the American edition of this book and to Mr. Albin Tybulewicz for his translation, September 5, 1968 Yu. R. Nosov v Preface to the Russian Edition One of the most important applications of semiconductor diodes is their use in electronic pulse circuits. The response of these diodes under switching conditions is governed by the phenomena of accumulation and dispersal of non­ equlibrium carriers, which are also observed in other p-n junction devices. It was found in the late 1940‘s that when point-contact ger­ manium diodes were used in circuits through which short (several tenths of a microsecond) electrical pulses were being passed, the 1 effective reverse resistance of these diodes decreased considerably below the static value. Further studies showed that when a diode was switched rapidly from the forward to the reverse direction, an anomalously large reverse current flowed for some time. In view of the importance
出版日期Book 1969
关键词diffusion; resistance; semiconductor; translation
版次1
doihttps://doi.org/10.1007/978-1-4684-8193-8
isbn_ebook978-1-4684-8193-8
copyrightSpringer-Verlag US 1969
The information of publication is updating

书目名称Switching in Semiconductor Diodes影响因子(影响力)




书目名称Switching in Semiconductor Diodes影响因子(影响力)学科排名




书目名称Switching in Semiconductor Diodes网络公开度




书目名称Switching in Semiconductor Diodes网络公开度学科排名




书目名称Switching in Semiconductor Diodes被引频次




书目名称Switching in Semiconductor Diodes被引频次学科排名




书目名称Switching in Semiconductor Diodes年度引用




书目名称Switching in Semiconductor Diodes年度引用学科排名




书目名称Switching in Semiconductor Diodes读者反馈




书目名称Switching in Semiconductor Diodes读者反馈学科排名




单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 23:13:35 | 显示全部楼层
tastrophes. His method across four kinds of crises is first to prioritize simple principles and simple institutions that prevent coupled catastrophes from cascading one to the other. The next step is to pursue 978-3-031-48749-1978-3-031-48747-7Series ISSN 2523-3084 Series E-ISSN 2523-3092
发表于 2025-3-22 04:05:58 | 显示全部楼层
Book 1969eing passed, the 1 effective reverse resistance of these diodes decreased considerably below the static value. Further studies showed that when a diode was switched rapidly from the forward to the reverse direction, an anomalously large reverse current flowed for some time. In view of the importance
发表于 2025-3-22 06:04:49 | 显示全部楼层
发表于 2025-3-22 12:39:51 | 显示全部楼层
Planar Diode with a Thin Base,ffusion length, the presence of such a contact alters the process of accumulation and dispersal of the excess charge and, consequently, the nature of the transient processes which accompany the switching of such a diode.
发表于 2025-3-22 16:26:37 | 显示全部楼层
Transient Processes in a Diode with a Small-Area Rectifying Contact,n of holes into the base during the flow of the forward current and the return of these holes to the contact when a reverse voltage was applied. Meacham and Michaels [92] introduced the term “charge storage” to describe an increase in the hole density in the base due to the injection of holes by the p-n junction.
发表于 2025-3-22 17:10:13 | 显示全部楼层
发表于 2025-3-22 22:57:12 | 显示全部楼层
Planar Diode with a Thin Base,ion is usually located in the immediate vicinity of a p-n junction and the base resistance is reduced by the shortening of the distance between this contact and the rectifying p-n junction. In those cases when the distance between the p-n junction and the ohmic contact is comparable with the hole di
发表于 2025-3-23 03:42:59 | 显示全部楼层
Transient Processes in a Diode with a Small-Area Rectifying Contact,he reduction of the reverse resistance under pulse conditions and the decrease of the rectified current with increasing frequency were observed for these diodes. The first explanations of the experimentally observed strong peaks of the reverse current correctly attributed these peaks to the injectio
发表于 2025-3-23 07:25:29 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-12 20:50
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表