Titlebook: Switch-Level Timing Simulation of MOS VLSI Circuits; Vasant B. Rao,David V. Overhauser,Ibrahim N. Hajj Book 1989 Kluwer Academic Publisher

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书目名称Switch-Level Timing Simulation of MOS VLSI Circuits影响因子(影响力)




书目名称Switch-Level Timing Simulation of MOS VLSI Circuits影响因子(影响力)学科排名




书目名称Switch-Level Timing Simulation of MOS VLSI Circuits网络公开度




书目名称Switch-Level Timing Simulation of MOS VLSI Circuits网络公开度学科排名




书目名称Switch-Level Timing Simulation of MOS VLSI Circuits被引频次




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Memorial

0893-3405 s book only one aspect of the analysis and design process is examined. but it is a very important aspect that has received much attention over the years. It is the problem of accurate circuit and timing simulation.978-1-4612-8963-0978-1-4613-1709-8Series ISSN 0893-3405

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persity in such systems, as is discussed in Section 13.3 of this chapter [5, 6]. The properties of hyperbranched polymers are significantly different from their linear analogs and are characterized by good solubility, low viscosity and a large number of end-groups that can be used for further functi

Efflorescent

Vasant B. Rao,David V. Overhauser,Timothy N. Trick,Ibrahim N. Hajj formation of larger siloxane networks, siloxane [R.SiO.] groups are ideal candidates for forming long chain-like molecules, while silsesquioxanes [RSiO.] and silicates [SiO.] are most commonly found in three-dimensional structures, both random polymers and oligomers, due to the number of siloxane l

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