Titlebook: Switch-Level Timing Simulation of MOS VLSI Circuits; Vasant B. Rao,David V. Overhauser,Ibrahim N. Hajj Book 1989 Kluwer Academic Publisher

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Book 1989ools were a research curiosity and in general were mistrusted by most designers and test engineers. In those days the programs were not user friendly, models were inadequate, and the algorithms were not very robust. The demand for simulation tools has been driven by the increasing complexity of inte

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controlled condensation of silanols that are suitable for the synthesis of organic-inorganic hybrid materials. Thus, silicon-based chemistry played a prominent role in the evolution of dendrimer chemistry [1–4], and it did not take long until the first examples of silicon-containing hyperbranched p

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Vasant B. Rao,David V. Overhauser,Timothy N. Trick,Ibrahim N. Hajjoiety. The carbon moiety can contain another silsesquioxane structure to form the so-called bridging class of silsesquioxanes. It can be an aryl or alkyl fragment with or without unsaturation and it can contain functionality such as amino groups or epoxy groups. In the field of silicone science a sh

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Vasant B. Rao,David V. Overhauser,Timothy N. Trick,Ibrahim N. Hajjerties such as thermal and oxidative stability, low surface tension, gas permeability, excellent dielectric properties, physiological inertness and moisture resistance [1–3]. Because of these properties silicones find a tremendous number of applications. Modifications of polysiloxane side groups are

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h will permit the creation of the long-dreamed chip-to-chip and system-to-system optical communications. Direct epitaxial growth of semiconductor III–V compounds on Si substrates is one of the most promising candidates for the fabrication of photonics devices on the Si platform. III–V quantum dots (