Titlebook: Springer Handbook of Semiconductor Devices; Massimo Rudan,Rossella Brunetti,Susanna Reggiani Book 2023 Springer Nature Switzerland AG 2023

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MOS Capacitors, MOS Transistors, and Charge-Transfer Devicestrate. The description of the MOS capacitor is extended to that of the photocapacitor, to be later applied to the case of solid-state imagers. The transistor structure considered in this chapter is simple (i.e., planar); the analysis, however, is carried out in detail, leading to models for the drai

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Planar MOSFETs and Their Application to IC Designsign using the most advanced planar MOSFET technological nodes. After a brief review of the progress in MOSFET architectures, the state-of-the-art UTBB FDSOI technology advantages are compiled, and some important designer needs are reminded. The main physical ingredients involved in the MOSFET stron

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Interconnect Processing: Integration, Dielectrics, Metals”) materials as well as recent trends concerning air gap and porous dielectrics. The thin-film metals cover developments in physical vapor deposition (PVD) tooling and processes as well as chemical vapor deposition (CVD) wetting and cap layers. In the final section, modern trends in dielectric and selective metal caps are covered.