Titlebook: Spectroscopic Ellipsometry for Photovoltaics; Volume 2: Applicatio Hiroyuki Fujiwara,Robert W. Collins Book 2018 Springer Nature Switzerlan

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Inorganic Semiconductors and Passivation Layerstor materials described here include the group-IV (Si, Ge, and a-Si:H), III–V (GaAs, GaP, InP, InAs, and AlAs), II–VI (CdTe, CdS, ZnTe, ZnSe, and ZnS), I–III–VI. (CuInSe. and CuGaSe.) and I.–II–IV–VI. (Cu.ZnSnSe., Cu.ZnSnS. and Cu.ZnGeSe.) semiconductors. For a-Si:H, Cu(In,Ga)Se. and Cu.ZnSn(S,Se).-

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Transparent Conductive Oxidesevices, are summarized. The TCO materials described here include In.O.:Sn (ITO), In.O.:H, InZnO, SnO.:F, TiO., and ZnO:Al (or Ga). Oxide layers such as MoO., NiO, and WO. are often employed to improve electronic properties at semiconductor interfaces and the optical data of these TCO layers are also

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Metalsre summarized. The metals described here include the group-Ib (Cu, Ag, Au), IIa (Mg), IIIb (Al), IVa (Ti), VIa (Cr, Mo, W), and VIII (Ni, Pt) metals. The optical constants of C (graphite), which has been applied widely for CdTe solar cells, are also shown. It is established in this chapter that the

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Introduction,ptical and recombination loss analysis based on external quantum efficiency characterization is emphasized. By comparing the absorption spectra of various solar cell materials, the optical properties of semiconductors are further discussed. This chapter will also provide an overview for the contents of subsequent chapters in this book.

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