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Titlebook: Spectroscopic Ellipsometry for Photovoltaics; Volume 2: Applicatio Hiroyuki Fujiwara,Robert W. Collins Book 2018 Springer Nature Switzerlan

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书目名称Spectroscopic Ellipsometry for Photovoltaics
副标题Volume 2: Applicatio
编辑Hiroyuki Fujiwara,Robert W. Collins
视频video
概述Presents the ellipsometry characterization of solar cell materials/devices.Provides easy-to-follow explanations of ellipsometry data analysis.Includes optical constants for all solar cell component la
丛书名称Springer Series in Optical Sciences
图书封面Titlebook: Spectroscopic Ellipsometry for Photovoltaics; Volume 2: Applicatio Hiroyuki Fujiwara,Robert W. Collins Book 2018 Springer Nature Switzerlan
描述.Spectroscopic ellipsometry has been applied to a wide variety of material and device characterizations in solar cell research fields. In particular, device performance analyses using exact optical constants of component layers and direct analyses of complex solar cell structures are unique features of advanced ellipsometry methods. This second volume of Spectroscopic Ellipsometry for Photovoltaics presents various applications of the ellipsometry technique for device analyses, including optical/recombination loss analyses, real-time control and on-line monitoring of solar cell structures, and large-area structural mapping. Furthermore, this book describes the optical constants of 148 solar cell component layers, covering a broad range of materials from semiconductor light absorbers (inorganic, organic and hybrid perovskite semiconductors) to transparent conductive oxides and metals. The tabulated and completely parameterized optical constants described in this book are the most current resource that is vital for device simulations and solar cell structural analyses..
出版日期Book 2018
关键词Amorphous Si solar cells; CIGS growth ananlysis; Compound solar cells; Hybrid perovskites; Microcrystall
版次1
doihttps://doi.org/10.1007/978-3-319-95138-6
isbn_ebook978-3-319-95138-6Series ISSN 0342-4111 Series E-ISSN 1556-1534
issn_series 0342-4111
copyrightSpringer Nature Switzerland AG 2018
The information of publication is updating

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Optical Simulation of External Quantum Efficiency Spectrabased on the SE model and the measured EQE suggests electrical losses from photo-generated carriers near the ./. and ./. interfaces, the latter caused by an .-layer thickness greater than the hole collection length. Also demonstrated here through comparisons of EQE measurements and simulation is enh
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On-line Monitoring of Photovoltaics Productione facing up and passes a station designed for on-line mapping by SE. The polarization generation and detection arms of the ellipsometer located beneath the panel scan from side to side and acquire SE data in a through-the-glass measurement mode. In this approach, a maximum of ~30 locations can be me
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Real Time and Mapping Spectroscopic Ellipsometry of Hydrogenated Amorphous and Nanocrystalline Si Sofunction .. Analysis of the dielectric function permits quantification of the relative amounts of the .-Si-H and .-Si-H components that exist during the growth of mixed-phase Si:H layers. Based on these real time SE analysis results, a PECVD growth evolution diagram has been developed for the bottom
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Inorganic Semiconductors and Passivation Layersg several transition peaks calculated from the Tauc-Lorentz model. In this chapter, the parameterization results for all the 58 semiconductors are also summarized. For the passivation layers, the parameterization results obtained using the Sellmeier model are shown.
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