找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Soft Computing for Reservoir Characterization and Modeling; Patrick Wong,Fred Aminzadeh,Masoud Nikravesh Book 2002 Springer-Verlag Berlin

[复制链接]
楼主: 遮蔽
发表于 2025-3-30 11:48:33 | 显示全部楼层
Statistical Pattern Recognition and Geostatistical Data Integration of multi-variate, imprecise and uncertain reservoir data. Geostatistics is a well-established field for 3D spatial modeling and uncertainty quantification of the reservoir facies and petro-physical properties. In this paper we present a theoretical and practical framework for developing and applyin
发表于 2025-3-30 14:46:13 | 显示全部楼层
发表于 2025-3-30 16:37:43 | 显示全部楼层
发表于 2025-3-31 00:08:15 | 显示全部楼层
发表于 2025-3-31 03:52:52 | 显示全部楼层
Book 2002 this analysis, he developed TRIZ (G. Altshuller, "40 Principles: TRIZ Keys to Technical Innovation. TRIZ Tools," Volume 1, First Edition, Technical Innovation Center, Inc. , Worcester, MA, January 1998; Y. Salamatov, "TRIZ: The Right Solution at the Right Time. A Guide to Innovative Problem Solving
发表于 2025-3-31 06:10:49 | 显示全部楼层
Mapping the Gas Column in an Aquifer Gas Storage with Neural Network Techniquestributes showed indications of the gas extent but also were not conclusive. The neural network classification integrated three seismic attributes leading to a clearer delineation of the gas extent compared to the AVO results. The case study showed a successful application of neural networks which was used to solve a highly ambiguous problem.
发表于 2025-3-31 11:06:14 | 显示全部楼层
1434-9922 udes supplementary material: In the middle of the 20th century, Genrich Altshuller, a Russian engineer, analysed hundreds of thousands of patents and scientific publications. From this analysis, he developed TRIZ (G. Altshuller, "40 Principles: TRIZ Keys to Technical Innovation. TRIZ Tools," Volume
发表于 2025-3-31 16:13:56 | 显示全部楼层
c properties of the MOSFET.Includes supplementary material: .Matching Properties of Deep Sub-Micron MOS Transistors. examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the
发表于 2025-3-31 18:15:46 | 显示全部楼层
P. M. Wong,F. Aminzadeh,M. Nikraveshctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFET
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-12 04:57
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表