Titlebook: Simulation of Semiconductor Processes and Devices 2007; SISPAD 2007 Tibor Grasser,Siegfried Selberherr Conference proceedings 2007 Springer

乳汁

Firefly

Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches, concentration and charge state. Consistently with these results we developed a continuous model for As activation and diffusion in Si. The model was implemented in the Sentaurus Process Simulator and calibrated using a wide range of experimental results available in the literature. It was independe

corpus-callosum

Molecular Dynamics Modeling of Octadecaborane Implantation into Si,y and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have obtained and analyzed the doping profiles and the amount and morphology of the damage produced within the target. Our simulation results indicate that the use of octadecaborane clusters fo

BRACE

High Performance, Strained-Ge, Heterostructure p-MOSFETs,-tunneling (including band structure and quantum effects), Low-field Mobility (k.p and Boltzmann Transport), Full-Band Monte-Carlo, and 1-D Poisson -Schrödinger Simulations. The tradeoffs between drive current (ION), intrinsic delay (τ), band-to-band-tunneling (BTBT) leakage and short channel effect

时间等

TSH582

stress-response

RAGE

可卡

surmount

Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nmhnology, the threshold voltage shift of ∼0.3V is found to be caused by tungsten micro-bridge between adjacent bit-lines. Simulations and experimental data showed that tungsten re-sputtering is occurred during the deposition of HDP (High Density Plasma)-SiO. used as the filling dielectric between tun