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Titlebook: Simulation of Semiconductor Processes and Devices 2007; SISPAD 2007 Tibor Grasser,Siegfried Selberherr Conference proceedings 2007 Springer

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书目名称Simulation of Semiconductor Processes and Devices 2007
副标题SISPAD 2007
编辑Tibor Grasser,Siegfried Selberherr
视频video
图书封面Titlebook: Simulation of Semiconductor Processes and Devices 2007; SISPAD 2007 Tibor Grasser,Siegfried Selberherr Conference proceedings 2007 Springer
描述The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
出版日期Conference proceedings 2007
关键词Performance; VLSI; algorithm; algorithms; modeling; numerical methods; optoelectronics; simulation; verifica
版次1
doihttps://doi.org/10.1007/978-3-211-72861-1
isbn_softcover978-3-7091-1911-2
isbn_ebook978-3-211-72861-1
copyrightSpringer-Verlag Vienna 2007
The information of publication is updating

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Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment, etching / deposition cycles’ time ratios, the DRIE process shows three different regimes. These regimes are as well represented by the developed model. The simulation results obtained are compared with the corresponding REM images of trench etching experiments.
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Molecular Dynamics Modeling of Octadecaborane Implantation into Si,les and the amount and morphology of the damage produced within the target. Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several advantages with respect to monatomic B beams, mainly related to the reduction of channeling and the lower amount of residual damage at the end of range.
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High Performance, Strained-Ge, Heterostructure p-MOSFETs,chrödinger Simulations. The tradeoffs between drive current (ION), intrinsic delay (τ), band-to-band-tunneling (BTBT) leakage and short channel effects (SCE) have been systematically compared in high mobility strained-Ge Heterostructure FETs (H-FETs).
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Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation,vel” — the best established definition of nanotechnology [.] — is essential to maintaining Moore’s Law. However nanoelectronics, like many other applications for nanotechnology, requires more than making single devices in small areas. To be commercially relevant, structures must be manufactured in v
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