Titlebook: Simulation of Semiconductor Processes and Devices 2004; Gerhard Wachutka,Gabriele Schrag Conference proceedings 2004 Springer-Verlag Wien

勤劳

暂时别动

https://doi.org/10.1007/978-3-7091-0624-2Doping; Layout; Signal; Simulation; algorithm; device operation; device technology; fabrication processes; m

同义联想法

Continuum Modeling of Indium to Predict SSR Profiles,Indium (In) diffusion and dose-loss in silicon is modeled in a continuum simulator. The model includes the large segregation of In to End of Range (EOR) defects, and the dissolution of these defects resulting in dose-loss of In at the surface. The models developed are successfully applied to predict state of the art (90 nm) transistor performance.

束以马具

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices,el and 2-D Schrödinger equation in the confined cross section and provides insights into the performance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal . characteristics with great potential in scalability even when the gate length is below 5 nm with 2-by-2 nm channel cross section.

Muscularis

Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channeity model to take buried channel hole mobility enhancement into account. 2D simulations were performed to study the channel design space for strained Ge buried channel PMOSFETs and two different buried channel structures were proposed to control short channel effect (SCE) down to 30nm channel length.

DAMP

Simulation Study of Simple CMOS-Compatible Thin-SOI Vertical Bipolar Transistors on Thin BOX with aive SOI BiCMOS. These transistors have a virtual collector, which is an inversion layer created by the substrate bias. Device performance is suitable for mixed-signal applications, and scales well with design rules and SOI thickness.

collateral

s (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the p

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修正案

,Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green’s Function Formalism, of isotropic effective mass. More importantly, it is also found that the carriers flow not only in the lowest subband but also the second lowest one around the drain region, which cannot be expressed in conventional quantum correction methods.