Titlebook: Silicon-on-Insulator Technology: Materials to VLSI; Materials to VLSI Jean-Pierre Colinge Book 2004Latest edition Springer Science+Business

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Silicon-on-Insulator Technology: Materials to VLSIMaterials to VLSI

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Silicon-on-Insulator Technology: Materials to VLSI978-1-4419-9106-5

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OI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.978-1-4613-4795-8978-1-4419-9106-5

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Soi Materials, must sit on top of a high-quality amorphous silicon dioxide layer with no mechanical stress or electrically active defects. The thickness of the silicon layer typically is in the range of 100 nm, while the diameter of the wafer can reach 30 cm. There can thus be a 3,000,000:1 ratio between the width (diameter) and the thickness of an SOI crystal.

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The SOI MOSFET,n Chapter 6. SOI MOSFETs exhibit interesting properties that make them particularly attractive for applications such as radiation-hard circuits and high-temperature electronics. The properties of the SOI MOSFET operating in a harsh environment will be described in Chapter 7.

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Soi Materials,hin film of single-crystal silicon sitting on top of an insulator (usually SiO.) across an entire silicon wafer. Furthermore, the thin silicon crystal must sit on top of a high-quality amorphous silicon dioxide layer with no mechanical stress or electrically active defects. The thickness of the sili