Titlebook: Silicon-on-Insulator Technology; Materials to VLSI Jean-Pierre Colinge Book 1991 Springer Science+Business Media New York 1991 CMOS.JFET.Le

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Book 1991 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Introduction,tely unable to produce a successfully operating Lilienfield device. IGFET technology was then forgotten for a while, completely overshadowed by the enormous success of the bipolar transistor, discovered in 1947 [1.2].

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SOI Materials,pproach has its advantages and its pitfalls, and the type of application to which the SOI material is destined dictates the material to be used in each particular case. SIMOX, for instance, seems to be an ideal candidate for VLSI and rad-hard applications, wafer bonding is more adapted to bipolar an

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SOI Circuits,ently harder against SEU and gamma-dot than their bulk counterparts. SOI circuits are also free of latchup problems, which can be triggered by SEU or gamma-dot photocurrents in bulk CMOS circuits. Upon SEU or gamma-dot exposure SOI circuits such as 4k × 1 SIMOX SRAMs show bit error rates comparable

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licy approaches, whether driven by local governance or from within individual organizations or sectors of communities, are discussed in addition to outcomes generated by the approaches. ​978-3-319-12438-4978-3-319-12439-1Series ISSN 2211-7644 Series E-ISSN 2211-7652