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Titlebook: Silicon Nitride for Microelectronic Applications; Part 2 Applications John T. Milek Book 1972 Springer Science+Business Media New York 197

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书目名称Silicon Nitride for Microelectronic Applications
副标题Part 2 Applications
编辑John T. Milek
视频video
图书封面Titlebook: Silicon Nitride for Microelectronic Applications; Part 2 Applications  John T. Milek Book 1972 Springer Science+Business Media New York 197
描述This survey is concerned with the use of silicon nitride in the semi­ conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini­ stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro­ vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi­ mental data from the world‘s unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semic
出版日期Book 1972
关键词circuit; electronic material; electronics; ferroelectrics; integrated circuit
版次1
doihttps://doi.org/10.1007/978-1-4615-9609-7
isbn_softcover978-1-4615-9611-0
isbn_ebook978-1-4615-9609-7
copyrightSpringer Science+Business Media New York 1972
The information of publication is updating

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Passivation, This has resulted largely from the realization that silicon nitride serves as a barrier to the migration of charged ionic species, a major source of device instability. In addition, silicon nitride has a dielectric constant approximately twice that of silicon dioxide, very high dielectric strength,
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