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Titlebook: Silicon Carbide Ceramics—1; Fundamental and Soli Shigeyuki Sömiya (Professor and Professor Emeritus Book 1991 Elsevier Science Publishers L

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书目名称Silicon Carbide Ceramics—1
副标题Fundamental and Soli
编辑Shigeyuki Sömiya (Professor and Professor Emeritus
视频video
图书封面Titlebook: Silicon Carbide Ceramics—1; Fundamental and Soli Shigeyuki Sömiya (Professor and Professor Emeritus Book 1991 Elsevier Science Publishers L
描述Discovered by Edward G. Acheson about 1890, silicon carbide is one of the oldest materials and also a new material. It occurs naturally in meteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require­ ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies. In 1974, S. Prochazka reported that the addition of small amounts of boron compounds and carbide were effective in the sintering process to obtain high density. It was then possible to produce high density sintered bodies by pressureless sintering methods in ordinary atmosphere. Since this development, silicon carbide has received great attention as one of the high temperature structural ceramic materials. Since the 1970s, many research papers have appeared which report studies of silicon carbide and silicon nitride for structural ceramics.
出版日期Book 1991
关键词ceramics
版次1
doihttps://doi.org/10.1007/978-94-011-3842-0
isbn_ebook978-94-011-3842-0
copyrightElsevier Science Publishers Ltd 1991
The information of publication is updating

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Grain Boundary and High-Temperature Strength in SiC,special phase but simply of a relaxed structure with some extension, and is most likely composed mainly of SiC itself It is shown that the concept of extended grain boundaries can explain the observed behaviour in SiC.
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Sintering of Silicon Carbide,hat optimization of added B content, sintering atmosphere and heating rate are important factors controlling the density of the sintered SiC. Sinterability of Al-doped SiC powder and sintering by the addition of Al.O., Al-C, Al-B-C and other compounds are summarized.
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Grain Boundaries in High-Purity Silicon Carbide, and a 6H/15R hetero-polytype boundary were observed. Both boundaries were without an amorphous layer. The periodic arrangement of atoms in the boundaries was analyzed using the geometrical coincidence-site lattice model, while the actual atomic structure of the boundary was modeled from the HRTEM images.
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Crystal Chemistry of Silicon Carbide,he thermal stability of basic polytypes such as 2H, 3C, 4H, 15R and 6H, the effects of foreign atoms incorporated in the lattice on the stability of the basic polytypes, and the stability of long-period polytypes.
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Epitaxial Growth of SiC Single Crystal Films,ical stability, large bandgap, and good carrier mobility. Reflecting on these circumstances, the single crystal growth technique has recently made great progress..In the first half of this chapter, the various single crystal growth methods will be described with an emphasis on epitaxial film growth.
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Sintering Behavior of Ultrafine Silicon Carbide Powder,asis on the effects of powder properties and sintering aids..The ultrafine SiC powder showed a remarkable densification in the presence of both carbon and boron as sintering aids, but the sintering aids were indispensable to densification. The homogeneous addition of sintering aids was important to
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