Titlebook: Silicon Anodization as a Structuring Technique; Literature Review, M Alexey Ivanov Book 2018 Springer Fachmedien Wiesbaden GmbH 2018 electr

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Alexey Ivanovrom them. In this paper, we investigate the role of a biomedical dataset on the classification accuracy of an algorithm. To this end, we quantify the complexity of a biomedical dataset in terms of its missing values, imbalance ratio, noise and information gain. We have performed our experiments usin

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Alexey Ivanovf the art machine learning techniques on benchmark data mining problems. For more general utility in this vein, however, issues are associated with the large numbers of classifiers produced by XCS; these issues concern both readability of the combined set of rules produced, and the overall processin

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view, the story appears somewhat different; the number of success stories does not appear to be as significant as those reported by academics. For instance, Heuristic Algorithms (HA) are still very widely used to tackle practical problems in operations research, where many of these are NP-hard and e

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Book 2018d into porous silicon as a sacrificial layer or directly dissolved in electropolishing regime. The work contains a detailed state of the art, experimental studies and modeling of the process for basic shape controlling techniques. Limitations of the developed FEM model with secondary current distrib

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Introduction,n order to fabricate such devices, different microstructuring techniques mostly coming from microelectronics technology are used. However, every technique is limited in choice of materials and achievable geometries, and often requires sophisticated and expensive equipment.

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State of the art,erial for research for more than half a century. The first report on anodization of silicon (and germanium) was published by Uhlir [78]. Further investigations of silicon anodization were performed ten years later by Memming and Schwandt [79].

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Microscale study of anodization process,e and check whether our data match the results from other researchers. In this chapter, dependence of microscale parameters of the anodization process (porosity, dissolution valence, etch rate, and interfacial surface quality) on current density and wafer resistivity for p-type silicon wafers was st

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