Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Textbook 2004Latest edition Springer-Verlag Berlin Heidelberg 2004 Diffusion.Hall e

Legend

Semiconductor Statistics,ve seen in Fig. 2.8. A discussion of these levels can be confined to the first Brillouin zone. We saw in the last chapter that due to the crystal periodicity, the electron wave functions, which in one dimension are .(.) = .(.) exp(.), also have to be periodic (.).

间谍活动

Charge and Energy Transport in a Nondegenerate Electron Gas,ron mass ... The effective mass takes care of the fact that the carrier is subject to the crystal field. In discussing the velocity distribution of the . of carriers, we found that the Fermi-Dirac distribution holds in general and that the Maxwell-Boltzmann distribution .(.) ∝ exp(−../2 ...) is an a

消散

Carrier Diffusion Processes,urrent j = −...▽.., where .. is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of . carriers in local variations in the type of doping, which is typical for p-n junctions and bipolar transistors.

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最高峰

Charge Transport and Scattering Processes in the Many-Valley Model,her 8 half-ellipsoids or 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the . of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclot

凝结剂

Carrier Transport in the Warped-Sphere Model,his case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28a–2.28c). In the zincblende lattice typical for III–V compounds, there is no center of inversion, in contrast to the diamond lattice.

Indicative

Quantum Effects in Transport Phenomena, only domain of quantum mechanics in semiconductivity. Although most transport phenomena can be explained by assuming a classical electron gas, there are some which can be understood only by quantum mechanical arguments. In Sect. 9.1 we will treat phenomena which rely on the quantum mechanical ., wh

Nonconformist

Impact Ionization and Avalanche Breakdown,uctors may serve as model substances for gaseous plasmas since their ionic charges are practically immobile and therefore the interpretation of experimental data is facilitated. Impact ionization has been achieved both in the bulk of homogeneously doped semiconductors at low temperatures and in p-n

Gorilla

Optical Absorption and Reflection,electric and magnetic fields. Measurements of these effects provide very useful information about band structure and energy levels in semiconductors. For numerical purposes it may be worth noting that a quantum energy . of 1 eV is equivalent to a wave number . of 8060 cm. and to a wavelength λ of 1.

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