Titlebook: Semiconductor Physics; Karlheinz Seeger Book 19731st edition Springer-Verlag Vienna 1973 physics.semiconductor

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Carrier Transport in the Warped-Sphere Model,his case are warped spheres which have already been discussed in Chap.2d (Figs. 2.29 and 2.30). In the zinc blende lattice typical for III-V compounds there is no center of inversion, in contrast to the diamond lattice.

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Quantum Effects in Transport Phenomena,t the only domain of quantum mechanics in semiconductivity. Although most transport phenomena can be explained by the assumption of a classical electron gas, there are some which can be understood only by quantum mechanical arguments. In Chap.9a we will treat phenomena which rely on the quantum mech

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Impact Ionization and Avalanche Breakdown,uctors may serve as model substances for gaseous plasmas since their ionic charges are practically immobile and therefore the interpretation of experimental data is facilitated. Impact ionization has been achieved both in the bulk of homogeneously doped semiconductors at low temperatures and in p-n

健谈

Optical Absorption and Reflection,ectric and magnetic fields. Measurements of these effects provide information about band structure and energy levels in semiconductors. In Appendix D useful relations between reflection and transmission coefficients and the index of refraction and the extinction coefficient are given, together with

规范要多

Light Generation by Semiconductors,e semiconductor laser may have a linewidth as low as 0.1 Å. These devices together with photovoltaic diodes and solar cells (Chaps.5h, 5i, and 12) are called “opto-electronic devices”. While the former convert electrical energy into optical radiation the latter do the inverse process. In this chapte

天文台

Miscellaneous Semiconductors,uctors where T is below 0.5 K. The effect has been predicted by Gurevich, Larkin, and Firsov [1] in 1962 and by Cohen [2] in 1964 and verified experimentally in the semiconductors GeTe [3], SnTe [4], and SrTiO. [5] in 1964.

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Anemia

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