Titlebook: Semiconductor Physical Electronics; Sheng S. Li Book 1993 Plenum Press, New York 1993 Diode.Semiconductor.bipolar junction transistor.elec

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Scattering Mechanisms and Carrier Mobilities in Semiconductors,lidity of the relaxation time approximation were not discussed in Chapter 7. In fact, the scattering mechanisms associated with the collision term in the Boltzmann equation are so complicated that we shall devote this entire chapter to deriving the relaxation time constants due to different scattering mechanisms in a semiconductor.

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Classification of Solids and Crystal Structure,talline structure. In one class, the atoms in a crystalline solid are set in an irregular manner, without any short- or long-range order in their atomic arrangement. This class of solids is commonly known as noncrystalline or amorphous materials. In another class, the atoms or group of atoms of the

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Lattice Dynamics,ss centers or the nuclei of the atoms in a solid are not at rest but instead they vibrate with respect to their mean equilibrium position. In fact, many thermal properties of a solid are determined by the amplitude and the phase factor of these atomic vibrations. For example, the specific heat of an

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Energy Band Theory,ne solid is due to the fact that many important physical and optical properties of a solid can be readily explained by using its energy band structure. In general, the energy band structure of a solid can be constructed by solving the one-electron Schrödinger equation for electrons in a crystalline

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Equilibrium Properties of Semiconductors,nged by many orders of magnitude through the incorporation of foreign impurities has made the semiconductor one of the most intriguing and unique electronic materials among all the crystalline solids. The invention of germanium and silicon transistors in the early 1950s and the silicon integrated ci

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Excess Carrier Phenomenon in Semiconductors,reated in a semiconductor when photons with energies exceeding the bandgap energy of the semiconductor are absorbed. Similarly, minority carrier injection can be achieved by applying a forward bias voltage across a p-n junction diode or a bipolar junction transistor. The inverse process to the gener

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