Titlebook: Semiconductor Lasers; Govind P. Agrawal,Niloy K. Dutta Book 1993Latest edition AT&T 1993 epitaxy.laser.semiconductor.semiconductor laser.t

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Introduction,eration of a solid-state ruby laser. in May 1960 and of an He-Ne gas laser. in December 1960. The feasibility of stimulated emission in semiconductor lasers was considered during this period,. and in 1962 several groups. reported the lasing action in semiconductors. The device consisted of a forward

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Basic Concepts,rms, a laser is an externally pumped self-sustained oscillator and consists of a gain medium that is placed inside an optical cavity to provide the necessaryfeedback. Various kinds of Lasers differ only in their choice of a suitablegain medium and the pumping mechanism. In semiconductor Lasers a sem

DIS

Recombination Mechanisms in Semiconductors,ified into two groups, radiative and nonradiative. . occurs when an electron in the conduction band recombines with a hole in the valence band and the excess energy is emitted in the form of a photon. Radiative recombination is thus the radiative transition of an electron in the conduction band to a

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Epitaxy and Material Parameters of InGaAsP,f major significance in the development of high-quality, reliable semiconductor Lasers. The commonly used techniques are liquid-phase epitaxy (LPE), vapor-phase epitaxy (VPE), and molecular-beam epitaxy (MBE). In LPE a saturated solution of the constituents of the layer to be grown is cooled while i

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EXPEL

Rate Equations and Operating Characteristics,ance characteristics and how well they match the requirements for a particular application. InGaAsP Lasers operating in the wavelength range of 1.3–1.6 µm have been developed primarily to serve as a light source in fibercommunication systems; Sec. 1.4 briefly discussed their performance requirements

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Distributed-Feedback Semiconductor Lasers,he gain peak is most intense, and a few percent of the output power is carried by other longitudinal modes lying close to the gain peak. Furthermore, even when these side modes are reasonably suppressed under CW operation, their power content increases significantly when the laser is pulsed rapidly.

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Coupled-Cavity Semiconductor Lasers,de-mode suppression. The operating wavelength is relatively unaffected by external perturbations since it is determined by the spatial period of a permanently etched grating. Although wavelength stability is an attractive feature of distributed-feedback lasers, it is achieved at the expense of tunab

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