Titlebook: Semi-Insulating III–V Materials; Nottingham 1980 G. J. Rees Book 1980 The individual contributors 1980 alloy.defects.electronic properties.

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The Influence of Substrate Properties on the Electrical Characteristics of Ion-Implanted GaAsimplanted and annealed layers. Certain Cr-doped semi-insulating substrates exhibit a marked decrease in sheet resistance during the anneal cycle. We find that the carrier concentration of the converted material increases with the background Si concentration in the starting material. The carrier conc

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Redistribution and Vaporization of Cr Impurities in Semi-Insulating GaAsndary ion mass spectrometry and flameless atomic absorption spectrometry. It is concluded that, as a result of the Cr vaporization from the substrate surface, Cr diffuses rapidly towards the surface at 800° C and above. Also, the influence of surface thermal dissociation on the Cr diffusion is discu

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Influence of Chromium Redistribution on the Electrical Properties of Se and Zn Implanted Cr-Doped Subove, below or close to 100%. By supposing that chromium and some other metallic impurity, which acts as an acceptor, redistribute during annealing, the electrical measurements on the implanted SI GaAs substrates can be understood.

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Redistribution of S and Cr in Thermally Annealed, Sulphur Implanted, Semi-Insulating GaAsan SiO. encapsulant. Sulphur was observed to diffuse rapidly only at low concentrations while chromium was found to redistribute into regions of implantation damage and lattice stress. The details of Cr redistribution are dependent on the sulphur implantation fluence and energy as well as on the spe

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2570-3285 en auf diese und viele weitere Fragen in der vollständig überarbeiteten 8. Auflage des Verhaltenstherapiemanuals. .Geschrieben für Psychologische und ärztliche Psychotherapeuten, Verhaltenstherapeuten, Psychiat978-3-642-55210-6Series ISSN 2570-3285 Series E-ISSN 2570-3293