Titlebook: Self-Trapped Excitons; K. S. Song,Richard T. Williams Book 19931st edition Springer-Verlag Berlin Heidelberg 1993 Absorption.Atom.Diffusio

我邪恶

Alkali Halides,cted [5.1] and were among the first in which the STE was observed [5.2]. A connection between STEs and lattice defect formation was established as early as 1965 [5.3]. With such an array of materials belonging to one family and the benefit of over 25 years of observation and theories, one should be

wall-stress

陈旧

Silicon Dioxide,h phenomena have been established as consequences of ionizing [7.1–7] and in some cases specifically valence [7.8–10] excitation of quartz and fused silica, rapid progress is being made on theoretical and experimental fronts. Because of the important technological roles of SiO. in electronics and op

capillaries

Simple Organic Molecular Crystals,y off-center relaxation of the excimer ion (X..) relative to the excited electron wave function. Partly because of the prominent nature of STE phenomena in alkali halides and related ionic crystals, one sometimes sees self-trapped excitons characterized as a phenomenon of ionic insulators. However,

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Neolithic

As2Se3 and Other Chalcogenides,and spectroscopy are becoming apparent. Several interesting and instructive parallels can be found between the chalcogenides and recent developments on STE structure in the alkali halides (Chap. 5). Amorphous and crystalline chalcogenide materials have been extensively studied in the last two or thr

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Other Materials, Extrinsic Self-Trapping, and Low-Dimensional Systems,In this chapter, we discuss self-trapped excitons in a variety of materials not addressed in previous chapters.

FLINT

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