Titlebook: Self-Organizing Systems; Third International Karin Anna Hummel,James P. G. Sterbenz Conference proceedings 2008 Springer-Verlag Berlin Hei

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Prologue

Rico Kusber,Sandra Haseloff,Klaus Davidin the 40 keV case. Broadening of the as — implanted profiles was observed at temperatures necessary for recrystallization of the formerly amorphous silicon. This is attributed to enhanced diffusion. More pronounced broadening and tailing, however, has been reported for single crystal silicon.

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Ilhem Kallel,Abdelhak Chatty,Adel M. AlimiDR transforms sharply to an amorphous state. Such amorphisation mechanism prevails for light ions. For heavy ions (Sb.) amorphisation arises mainly from a one-step AR formation. The proposed model of amorphisation gives the qualitative explanation of dose dependence of refractive index for different

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Elena Dubrovaentration of boron atoms after annealing at 700-900°C. This is also confirmed by the facts that the distribution of the secondary defects coincides with that of boron and that the percentage of the electrically active boron is significantly lower around the boron ion range. 2) The boron distribution

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DAFT

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Heesang Lee,Kyuhong Lee,YounHo Leelux and dose. By folding the beam profile with the geometry of the tools being implanted, the numerical control system can be programmed to optimize the use of the beam. With many of the tools and dies that are of interest to implant the shapes are complex and only some surfaces are to be implanted.

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